Intel's US 9,013,861: Charge storage device, method of making same, method of making an electrically conductive structure for same, mobile electronic device using same, and microelectronic device containing same

The first claim of Intel's patent titled -Charge storage device, method of making same, method of making an electrically conductive structure for same, mobile electronic device using same, and microelectronic device containing same - reads as follows:

1. A charge storage device comprising: a first electrically conductive structure and a second electrically conductive structure separated from each other by an electrical insulator, wherein: at least one of the first electrically conductive structure and the second electrically conductive structure comprises a porous structure containing multiple channels; the charge storage structure further comprises nanostructures located within at least some of the channels of the porous structure; and each one of the channels has an opening to a surface of the porous structure.