Nanotech's Shubhra Gangopadhyay
6,965,156, cited by no US patents to date
first claim:
A metal-to-metal antifuse comprising:
a lower metal electrode;
a lower adhesion promoting layer disposed over said lower metal electrode, said lower adhesion promoting layer being without substantial affect on electrical characteristics of the antifuse;
an amorphous carbon antifuse material layer disposed over said lower adhesion promoting layer;
an upper adhesion promoting layer disposed over said antifuse material layer, said upper adhesion promoting layer being without substantial affect on electrical characteristics of the antifuse; and
an upper metal electrode disposed over said upper adhesion promoting layer,
wherein said lower adhesion promoting layer and said upper adhesion promoting layer are selected from a group of materials comprising SixCy, having a ratio of x to y of about 1+/-0.4, and SixNy.
6,316,346 (cited by only one patent, the above-noted 6,965,156)
first claim
A method of fabricating an antifuse structure in an integrated circuit, comprising the steps of:
forming a first layer of conductive interconnects in said integrated circuit;
forming an antifuse layer primarily amorphous carbon over said first layer of conductive interconnects;
forming a second layer of conductive interconnects over said antifuse layer;
wherein said antifuse layer can be programmed at a voltage of less than about 8 volts.
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