Wednesday, February 02, 2005

Wall Street Journal mentions HP milestone in transistor area

On Feb. 1, 2005, the Wall Street Journal [Don Clark] published a story "H-P Team Claims a Milestone Toward Successor to the Transistor."

The motivation of the story, which appeared in the ninth paragraph of a nine paragraph story, was that Philip Kuekes, Duncan Stewart, and R. Stanley Williams, were having a paper published on Feb. 1, 2005 in the Journal of Applied Physics, which paper shows evidence that the crossbar approach can carry out logic functions, including the "not" function. It's interesting that the Wall Street Journal focussed on a technical publication, rather than patent publications. The crossbar approach has been discussed in several US patents.

The article mentioned collaborative work with James R. Heath [then at UCLA, now at Caltech.] Merely for reference, some publications related to Heath (and to Hewlett-Packard).

In passing, and without commenting on the HP work, one recalls that the work of Jan-Hendrik Schon of Lucent/Bell Labs, now known to be fraudulent, was directed to molecular-sized transistors. Schon even cited to the early work of Lilienfeld on solid state field effect transistors. [A paper published by Schon in the year 2000, citing to Lilienfeld, was later retracted by Science.]

Patent application:

System and method based on field-effect transistors for addressing nanometer-scale devices, 20050006671,

A system and method for selecting nanometer-scaled devices. The method includes a plurality of semiconductor wires. Two adjacent semiconductor wires of the plurality of semiconductor wires are associated with a separation smaller than or equal to 100 nm. Additionally, the system includes a plurality of address lines. Each of the plurality of address lines includes a gate region and an inactive region and intersects the plurality of semiconductor wires at a plurality of intersections. The plurality of intersections includes a first intersection and second intersection. The first intersection is associated with the gate region, and the second intersection is associated with the inactive region.

Work described herein has been supported, in part, by DARPA Grant No. ______. The United States Government may therefore have certain rights in the invention.

***with Hewlett-Packard {co-inventors: Stanley R. Williams; (Mountain View, CA) ; Kuekes, Philip J.; (Menlo Park, CA)] ***

Chemically synthesized and assembled electronic devices, 20010054709

A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.

This invention was made with Government support under (DMR-9726597) awarded by the National Science Foundation. The Government has certain rights in this invention.

The present application is related to the following applications: Ser. Nos. ______ ("Molecular Wire Crossbar Interconnects for Signal Routing and Communications") [PD-10981966-1]; ______ ("Molecular Wire Crossbar Memory") [PD-10981968-1]; ______ ("Molecular Wire Crossbar Logic") [PD-10981969-1]; ______ ("Demultiplexer for a Molecular Wire Crossbar Network") [PD-10981970-1]; and ______ ("Molecular Wire Transistors") [PD-10981967-1], all filed on even date herewith. The present application is the foundational application, upon which the related applications depend for construction of the various devices and apparati disclosed and claimed therein.

Issued patents:

Molecular wire crossbar memory, US 6,128,214 (issued October 3, 2000). Inventors: Kuekes; Philip J. (Menlo Park, CA); Williams; R. Stanley (Mountain View, CA); Heath; James R. (Santa Monica, CA)
Assignee: Hewlett-Packard (Palo Alto, CA)

A molecular wire crossbar memory (MWCM) system is provided. The MWCM comprises a two-dimensional array of a plurality of nanometer-scale devices, each device comprising a junction formed by a pair of crossed wires where one wire crosses another and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises a bi-stable molecular switch. The junction forms either a resistor or a diode or an asymmetric non-linear resistor. The junction has a state that is capable of being altered by application of a first voltage and sensed by application of a second, non-destructive voltage.

No mention of government interests

The present application is related to the following applications: Ser. Nos. 09/282,045 ("Molecular Wire Crossbar Logic") [PD-10981969-1] 09/280,225 ("Molecular Wire Crossbar Interconnect") [PD-10981966-1] 09/282,049 ("Demultiplexer for a Molecular Wire Crossbar Network") [PD-10981970-1]; and 09/292,767 ("Chemically Synthesized and Assembled Electronic Devices") [PD-10981071-1], all filed on even date herewith. The present application employs the chemical synthesis and assembly techniques disclosed and claimed in 09/282,048 [PD-10981971-1] and the crossbar interconnections disclosed and claimed in 09/280,225 [PD-10981966-1].

As of Feb. 2, 2005, the '214 was cited by 56 US patents, including US 6,850,455 (issued Feb. 1, 2005 to Unity Semiconductor Corporation), US 6,815,286 6,806,526, 6,781,868 to Advanced Micro Devices, US 6,586,965 to HP (but with statement: The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of Contract No. DABT-63-99-3-0003 awarded by Defense Advanced Research Projects Agency), 6,314,019 (to HP, no mention of government support), and 6,256,767 [to HP, Heath not a co-inventor, with text: The present application is related to the following applications: Ser. No. 09/280,189 ("molecular Wire Crossbar Memory"); Ser. No. 09/282,045 ("Molecular Wire Crossbar Logic"); Ser. No. 09/280,225 ("Molecular-Wire Crossbar Interconnect"); and Ser. No. 09/280,188 ("Molecular Wire Transistors"); and Ser. No. 09/292,767 ("Chemically Synthesized and Assembled Electronic Devices"), all filed on even date herewith. The present application employs the chemical synthesis and assembly techniques disclosed and claimed in Ser. No. 09/292,767, the crossbar interconnections disclosed and claimed in Ser. No. 09/280,225, the molecular wire transistors disclosed and claimed in Ser. No. 09/280,188, and the logic circuits disclosed and claimed in Ser. No. 09/282,188.]

Some publications:

H. Yu, Y. Luo, K. Beverly, J.F. Stoddart, H.-R. Tseng, and J.R. Heath, "The Molecule-Electrode Interface in Single-Molecule Transistors", Angew. Chem. Int. Ed. Vol. 42, 5706-5711 (2003).

M. R. Diehl, D.W. Steuerman, H.-R. Tseng, S.A. Vignon, A. Star, P. C. Celestre, J.F. Stoddart, and J.R. Heath, "Single-Walled Carbon Nanotube Based Molecular Switch Tunnel Junction", ChemPhysChem, Vol. 4, 1335-1339 (2003).

James R. Heath, “Wires, Switches, and Wiring: A Route Toward a Chemically Assembled Electronic Nanocomputer,” Pure Appl. Chem., Vol. 72, 11-20 (2000).

See also Endnote 16 of L. B. Ebert, It's a Strange, Strange World, Intellectual Property Today, October 2002:

n16 See US 6,198,655 and US 6,314,109, and note inventor affiliation, assignment, and federal funding.


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